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2SK3772-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB 200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 300 300 32 128 30 32 597.4 27 20 5 270 2.02 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1 Note *2 Note *3
Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=13A,L= 6.13mH, VCC=48V,RG=50 EAS limited by maximum channel temperature and Avalanche current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Thermal impedance' graph. < < < Note *4:IF = -ID, -di/dt = 50A/s,VCC= BVDSS,Tch=150C
kV/s VDS<300V = kV/s Note *4 Tc=25C W Ta=25C C C
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=30V VDS=0V ID=16A VGS=10V ID=16A VDS=25V VDS=25V VGS=0V f=1MH VCC=180V ID=16A VGS=10V RGS=10 VCC=150V ID=32A VGS=10V IF=32A VGS=0V Tch=25C IF=32A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient Tch=25C Tch=125C
Min.
300 3.0
Typ.
Max.
5.0 25 250 100 0.13
Units
V V A A nA S pF
12
0.10 24 1970 2955 335 502 20 30 29 44 7.5 11 57 86 7 10.5 44.5 67 18 27 13.5 20.5 0.90 1.50 270 3.0
ns
nC
V ns C
Thermal characteristics
Item Thermal resistance www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.463 62
Units
C/W C/W
1
2SK3772-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
400
80
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C
70 20V 10V 300 60 8V
50
PD [W]
ID [A]
200
40
30
7V
100
20 6.5V 10 VGS=6.0V
0 0 25 50 75 100 125 150
0 0 4 8 12 16 20 24
Tc [C]
VDS [V]
100
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
100
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
10 10
ID[A]
1 1
0.1 0.1 0.1
0
1
2
3
4
5
6
7
8
9
10
gfs [S]
1
10
100
VGS[V]
ID [A]
0.30
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C
VGS=6V 6.5V 7V
0.5
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=16A,VGS=10V
0.25 0.4
RDS(on) [ ]
0.20
RDS(on) [ ]
0.3
8V 0.15 10V 20V 0.10
0.2 max. typ. 0.1
0.05
0.00 0 10 20 30 40 50 60
0.0 -50 -25 0 25 50 75 100 125 150
ID [A]
Tch [C]
2
2SK3772-01
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=32A,Tch=25 C
12 Vcc= 60V max. 10 150V 240V
VGS(th) [V]
4.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
VGS [V]
4.0
8
6
4
2
0 0 10 20 30 40 50 60 70 80
Tch [C]
Qg [nC]
10
4
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 100
Ciss 10
3
10
C [pF]
10
2
Coss
IF [A]
1
3
10
1
Crss
10
0
10
0
10
1
10
2
10
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10
700
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=32A
IAS=13A
600
500 10
2
td(off)
t [ns]
td(on)
EAV [mJ]
400
IAS=20A
300 IAS=32A 200
tf 10
1
tr
100
10
0
0
-1
10
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [C]
3
2SK3772-01
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V
Single Pulse
Avalanche Current I AV [A]
10
1
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
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